Jian Wang, Mustafa Al-Qadi, Wen-Jr Jiang, Kangmei Li, You-Wei Chen, Konstantin Kuzmin, Calvin Ho, Yan Yang Zhao, Hiroaki Yamada, Jason Ackert, David Dougherty, Weilin Liu, Chengkun Chen, Yifeng Zhou, Ping Wang, Xu Liu, Kevin Schmidt, Jocelyn Nee, Kenneth A. McGreer, Marcel Boudreau, Jibin Sun, Winston I. Way, Hui Xu

120-GBaud 16-QAM silicon photonics IQ modulator for data center interconnection

  • Atomic and Molecular Physics, and Optics
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We demonstrated all-silicon IQ modulators (IQMs) operating at 120-GBaud 16-QAM with suitable bandwidth, and output power. We required optical signal-to-noise-ratio (rOSNR) that have promising potential to be used in 800-Gbps small-form-factor pluggable transceivers for data center interconnection. First, we tested an IQM chip using discrete drivers and achieved a per-polarization TX output power of −18.74 dBm and an rOSNR of 23.51 dB over a 100-km standard SMF. Notably, a low BER of 1.4e-3 was obtained using our SiP IQM chip without employing nonlinear compensation, optical equalization, or an ultra-wide-bandwidth, high-ENOB OMA. Furthermore, we investigated the performance of a 3D packaged transmitter by emulating its frequency response using an IQM chip, discrete drivers, and a programmable optical filter. With a laser power of 17 dBm, we achieved a per-polarization output power of −15.64 dBm and an rOSNR of 23.35 dB.

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