Li Tao, Bowen Jiang, Sijie Ma, Yan Zhang, Yuanqiang Huang, Yueyi Pan, Weijun Kong, Jun Zhang, Guokun Ma, Houzhao Wan, Yong Ding, Paul J. Dyson, Mohammad Khaja Nazeeruddin, Hao Wang

3D trigonal FAPbI3‐based multilevel resistive switching nonvolatile memory for artificial neural synapse

  • General Medicine
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AbstractHybrid perovskites have attracted enormous attention in the next generation resistive switching (RS) memristor for the artificial synapses, owing to their ambipolar charge transport, long diffusion length, and tunable visible bandgap. However, the variable switch, limited reproducibility, and poor endurance are the obstacles to the practical application of the perovskite memristors. Herein, we reported a multilevel RS nonvolatile memory based on a 3D trigonal HC(NH2)2PbI3 (α‐FAPbI3) perovskite layer modified by 1‐cyanobutyl‐3‐methylimidazolium chloride ([CNBmim]Cl) and sandwiched between ITO and Au electrodes (Au/[CNBmim]Cl/α‐FAPbI3/SnO2/ITO). In contrast to the bare memristor with failure switching from low resistance state (LRS) to high resistance state (HRS), the memristor device based on the α‐FAPbI3 modified with [CNBmim]Cl (Target device) shows the retention time over 104 s with On/Off ratio (>102) and endurance up to 550 cycles. The stable RS cycle benefits from the accelerated electrons de‐trapping from the reduced defects and fast charge separation in the interface of α‐FAPbI3/electrode, leading to the rupture of conductive filaments and transition of LRS to HRS. As a two‐terminal analog synaptic device, the target device can realize random handwritten digit recognition with an impressive accuracy of 89.3% on the condition of low learning phases (500 training cycles).

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