DOI: 10.1002/sdtp.16492 ISSN:
8‐1: Invited Paper: High Mobility Poly‐Crystalline Oxide TFT Achieving Mobility over 50 cm2/Vs and High Level of Uniformity on the Large Size Substrates
Masashi Tsubuku, Hajime Watakabe, Toshinari Sasaki, Takaya Tamaru, Ryo Onodera, Marina Mochizuki, Hiroyuki Kimura, Emi Kawashima, Daichi Sasaki, Yuki Tsuruma- General Medicine
We have successfully developed stable poly‐crystalline oxide semiconductor (Poly‐OS) as channels of TFT on Gen.6 glass substrates. This technology has significantly improved mobility and stability at the same time, achieving both extremely low off‐state current similar to conventional oxide TFTs and high on‐state current equivalent to LTPS TFTs.