DOI: 10.1002/sdtp.16494 ISSN:
8‐4: Oxide Semiconductor In‐Zn‐O‐X system with High Electron Mobility
Shigeki Tokuchi, Ryo Shiranita, Kyosuke Teramura, Mamoru Furuta- General Medicine
We proposed high mobility In‐Zn‐O‐X system, in which X is added to control carrier density. Choosing favorable X additives and optimizing the composition are keys to achieve high mobility. We have demonstrated Thin‐Film Transistor with its mobility over 60 cm2/Vs, and that would be useful for high‐definition display.