A Novel Thermal Interface Material Composed of Vertically Aligned Boron Nitride and Graphite Films for Ultrahigh Through‐Plane Thermal Conductivity

Abstract

The relentless drive toward miniaturization in microelectronic devices has sparked an urgent need for materials that offer both high thermal conductivity (TC) and excellent electrical insulation. Thermal interface materials (TIMs) possessing these dual attributes are highly sought after for modern electronics, but achieving such a combination has proven to be a formidable challenge. In this study, a cutting‐edge solution is presented by developing boron nitride (BN) and graphite films layered silicone rubber composites with exceptional TC and electrical insulation properties. Through a carefully devised stacking‐cutting method, the high orientation degree of both BN and graphite films is successfully preserved, resulting in an unprecedented through‐plane TC of 23.7 Wm⁻¹ K⁻¹ and a remarkably low compressive modulus of 4.85 MPa. Furthermore, the exceptional properties of composites, including low thermal resistance and high resilience rate, make them a reliable and durable option for various applications. Practical tests demonstrate their outstanding heat dissipation performance, significantly reducing CPU temperatures in a computer cooling system. This research work unveils the possible upper limit of TC in BN‐based TIMs and paves the way for their large‐scale practical implementation, particularly in the thermal management of next‐generation electronic devices.