A temperature sensing based Na0.5Bi0.5TiO3 ferroelectric memristor device for artificial neural systems
Lei Zhou, Yifei Pei, Changliang Li, Hui He, Chao Liu, Yue Hou, Haoyuan Tian, Jianxin Guo, Baoting Liu, Xiaobing Yan- Physics and Astronomy (miscellaneous)
With the development of artificial intelligence technology, it remains a challenge to improve the resistive switching performance of next-generation nonvolatile ferroelectric memristor device (FMD). Here, we report an epitaxial Na0.5Bi0.5TiO3 ferroelectric memristor device (NBT-FMD) with temperature sensing. The NBT epitaxial films with strong polarization strength and suitable oxygen vacancy concentration were obtained by temperature adjustment (700 °C). In addition, the function of the spiking-time-dependent plasticity and paired-pulse facilitation is simulated in ferroelectric memristor devices of Pt/NBT/SrRuO3 (SRO)/SrTiO3 (STO). More importantly, we have designed a neuronal circuit to confirm that NBT-FMD can serve as temperature receptors on the human skin, paving the way for bio-inspired application.