DOI: 10.1039/d3na00387f ISSN:
ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistors
Reyhaneh Mahlouji, Wilhelmus M. M. (Erwin) Kessels, Abhay A. Sagade, Ageeth A. Bol- General Engineering
- General Materials Science
- General Chemistry
- Atomic and Molecular Physics, and Optics
- Bioengineering
2D metallic TiSx can be grown at low temperatures using atomic layer deposition (ALD). Herein, we show that ultrathin films of 2D TiSx (∼1.2 nm) prepared by ALD can be used as contacts to 2D MoS2 in field-effect transistors (FETs) and improve the overall device metrics.