All‐Electric Functional PdSe₂ Planar‐Hall Logic Field‐Effect Transistors

Abstract

2D semiconductor logic has advantages of reconfigurable multi‐state operation through extrinsic charge‐transfer doping mechanisms such as molecular adsorption and light illumination. However, their precise control remains challenging and they bring defects and blur the specified logic protocol for computation. Semiconducting 2D layered palladium diselenide (PdSe₂), a noble transition‐metal dichalcogenide with a puckered pentagonal atomic structure, has shown great potential for multi‐functional devices owing to its low crystal symmetry. Here, anisotropic charge transport in band‐like, variable‐range hopping, and quantum‐dot tunneling regimes are demonstrated in a multi‐terminal PdSe₂ transistor. The gate‐tunable oscillatory Hall charge movement due to zero‐magnetic‐field pseudo‐planar Hall effect provides a physical reference to encode the dynamical PdSe₂ anisotropic energy dispersions up to room temperature. Complementary XOR and XNOR logic relations between Hall voltage output and gate/drain voltage inputs are identified and they are reconfigurable with each other by changing the current injection direction. Controlling the layer number further reconfigures the planar‐Hall effect polarity and Hall logic. This work paves an all‐electric reconfigurable way to a planar‐Hall logic transistor, enabling the initialization, manipulation, and detection of anisotropic electronic states, and offers opportunities for next‐generation computing utilizing multiple energy bands of engineered anisotropies in puckered pentagonal 2D materials.