Color centers and crystal structural transformations induced by femtosecond laser writing in 4H-SiC

Silicon carbide (SiC), a wide-bandgap semiconductor, is gaining importance in quantum technologies due to its promising color centers. Among SiC polytypes, 4H-SiC stands out with its wide bandgap and low impurities, making it ideal for color center research. Femtosecond laser direct writing enables precise creation of color centers, offering nanoscale accuracy. This study explores the optical properties and structural changes in 4H-SiC induced by laser writing. Techniques such as Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy are used to analyze lattice damage and transformations, providing insights into precise color center fabrication and its implications for quantum applications.