Design of Perovskite‐Based Photodetector Demonstrating Wide Spectral Responsivity Employing Graphene Oxide for Enhanced Electron Transport

Perovskite‐based photodetectors have gained significant attention due to their remarkable optoelectronic properties, including high absorption coefficients, tunable bandgaps, and suitable carrier diffusion lengths. This work focuses on designing a high‐performance perovskite photodetector with a device structure of FTO/GO/CH₃NH₃SnBr₃/Zn₃P₂/Au, utilizing SCAPS‐1D simulations to explore key performance parameters. The analysis systematically examines the effects of crucial factors such as the perovskite layer thickness and defect densities on important device metrics, including detectivity, responsivity, and dark current. In this design, CH₃NH₃SnBr₃ (methylammonium thin bromide) serves as the absorber layer, while GO (graphene oxide) and Zn₃P₂ (zinc phosphide) act as interfacial layers, contributing to enhanced device performance. The simulated photodetector demonstrates an impressive short‐circuit current density(J_SC) of 25.68 mA cm⁻² and achieves a quantum efficiency exceeding 95% in the visible spectrum. Additionally, the device shows a maximum detectivity of 9.7 × 10¹⁶ Jones and a responsivity peak of 0.57 A W⁻¹, particularly in the red and near‐infrared regions of the spectrum. These results underscore the immense potential of perovskite materials for developing efficient, wide‐spectrum photodetectors with enhanced optoelectronic characteristics.