Die Crack Prevention and Detection in Advanced Packaging
Woo Young HanSemiconductor manufacturers are
continuously driving efforts to put
more computing power and speed into
less volume. At the same time,
consumers are demanding devices with more functionality that integrate a variety of interconnected circuit types. The result has been an
increasing reliance on advanced
packaging technologies that use fab-like processes to integrate multiple
chips and to provide the increased I/O
capability required.
The demand for higher performance
electronics in smaller packages has led
to the development of wafer level packaging (WLP), panel level packaging (PLP) and fan-out level packaging. The
need for low cost, smaller packages
with high density interconnects for
cell phones and wearable devices has
been leading the development of
advanced packaging. All of these advanced packaging techniques involve stacking multiple chips in vertical directions. In DRAM memory packaging, there are as many as eight dies
integrated vertically and the manufacturers are trying to keep the
thickness of the die as minimal as possible to keep an overall thin
package profile.
Backside thinning of fully processed
wafers has become a widely used
technique in the industry. Typical
final wafer thickness in the early 1990s was around 450µm but current wafers are usually thinner than 50µm.
As the final wafer thickness is getting
thinner, they are becoming more fragile and susceptible to cracks and chips. Chipping and cracks can cause near-term yield and long-term reliability
problems. If a chip or crack is discovered during the final processes of advanced packaging, the overall final yield will be lower. If it is not discovered, the end device may not be reliable in the real world and fail for
the consumer, a more costly consequence.
As wafers became thinner, the industry
started seeing sidewall cracks, inner
cracks and micro cracks starting from
the kerf or street area initiated from
wafer sawing. These types of cracks
can cause air bubbles around the cracks
during the molding process in fan-out
packaging and eventually lead to mold cracking which can lead to lower
yields. It would be very beneficial if
these types of cracks are detected
early and the affected die removed.
However, these types of cracks are
happening underneath the die surface and are difficult to see with
traditional bright field and dark field
illuminations because they are underneath the top surface.
Consumer tolerance for device failure
is at an all-time low, as they demand
more functionality and more convenience
from their electronic devices.
Wafer level packaging (WLP), panel level packaging (PLP) and fan-out level
packaging advanced packaging techniques all involve extensive use of bumps and die thinning to establish
electrical connections in vertical directions. Packaging these vertically integrated die requires the need to provide interlayer connections that are
as small and reliable as the multilayer
interconnect technologies used within the chip.
This need for vertical connections has
created a whole new class of technologies; advanced packaging;
with a whole new lexicon of terms and
acronyms: through-silicon vias (TSVs),
redistribution layers (RDLs), bumps,
pillars, nails, under bump metallization (UBM), wafer-level
packaging (WLP), fan-in, fan-out, and
many more. All of these technologies
serve the purpose of providing reliable, electrically isolated,
vertical connections, and most, at some
point, involve the creation of a
conductive; ump; protruding through an insulating layer to carry the signal to
the next layer above or below.
As more chips are integrated vertically, overall package thickness increased as well and the common ways
to reduce the overall package thickness
are by thinning chips or die and reducing bump sizes. As die or chips are getting thinner, they become more fragile and susceptible to cracks or chippings. Cracks or chips can reduce
the final package yields or cause long
term reliability issues in the consumer
devices.
This paper describes inspection challenges for cracks underneath the die surface and possible solutions to
overcome the challenges.