Electric field controlled resistive switching behavior and optical modulation in Al/BaTiO3/LaNiO3 devices
Lei Wu, Wenbo Gao, Juanfei Li, Rui Wang, Xiaoqiang Wang, Mingya Li, Jinsheng LiAbstract
BaTiO3 (BTO) thin films were deposited on LaNiO3 (LNO)/SiO2/Si substrates by magnetron sputtering, and the LNO thin film was deposited as a bottom electrode and a buffer layer. The bipolar resistive switching (RS) behaviors have been observed in the Al/BTO/LNO devices, and the effect of illumination conditions on the RS behavior was investigated. The set voltage was effectively reduced by the photogenerated carrier, and a greatly improved OFF/ON resistance ratio of ∼120 was achieved under high light conditions. The Al/BTO/LNO devices showed good endurance and retention performance. The conduction mechanisms of the Al/BTO/LNO devices have been discussed based on the migration of defects and photogenerated carriers. These results facilitated a deeper study of BTO‐based multifunctional storage devices and demonstrated the tunable photoresponse characteristic.