DOI: 10.1039/d3ee01226c ISSN: 1754-5692

Engineering an atomic-level crystal lattice and electronic band structure for an extraordinarily high average thermoelectric figure of merit in n-type PbSe

Bangzhi Ge, Hyungseok Lee, Jino Im, Youngsu Choi, Shin-Yeong Kim, Ji Yeong Lee, Sung-Pyo Cho, Yung-Eun Sung, Kwang-Yong Choi, Chongjian Zhou, Zhongqi Shi, In Chung
  • Pollution
  • Nuclear Energy and Engineering
  • Renewable Energy, Sustainability and the Environment
  • Environmental Chemistry
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Multiscale defect structures driven by interstitial Cu, off-centered Pb and Se atoms and scarce anion vacancies in the new CuxPb(Se0.8Te0.2)0.95 give a record-high average ZT among all polycrystalline n-type thermoelectric materials due to high PF.

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