DOI: 10.1116/6.0003388 ISSN: 1055-5269
Silicon nanowires analyzed by x-ray photoelectron spectroscopy
Ghulam Farid, Stefanos Chaitoglou, Roger Amade, Rogelio Ospina, Enric Bertran-Serra- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Condensed Matter Physics
Silicon nanowires were characterized by x-ray photoelectron spectroscopy with an Al Kα (1486.6 eV) excitation source. The sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. Survey spectrum and C 1s, O 1s, and Si 2p core-level spectra were acquired.