The Stability of Straightened Ta Filament During Chemical Vapor Deposition of Diamond Film
Junhuai Xiang, Shuang Liu, Xuezhang Liu, Caihua Wang, Kui Wen, Huawen Hu, Hangyu Long- Materials Chemistry
- Electrical and Electronic Engineering
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Maintaining the geometrical stability of hot filament is a challenge in chemical vapor deposition (CVD) over a larger area since deformation varies the distance between the filament and the substrate and, consequently, destroys the uniformity of diamond deposition. Herein, Ta filament is straightened with a tensile stress ranging from 4.40 to 11 MPa to suppress deformation, and the stability during the CVD process of diamond film is evaluated. Scanning electron microscopy and energy dispersive X‐ray are further utilized to investigate the morphological and structural evolutions of Ta filament. Results show that straightened Ta filament maintains geometrical stability without any visible deformation or breakage and uniform deposition of diamond film is obtained through Ta filament undergone a transformation from Ta to Ta2C and then to TaC. At high deposition pressure (7 kPa) or a low concentration of methane (1%), the straightened Ta filament goes through a moderate transformation, which implies the cracks caused by rough transformation can be avoided, thus prolonging the lifetime of straightened Ta filament. These works provide significant guidelines for the large‐scale manufacture of diamond deposition.