Temperature Dependence of Electrical Properties of Ammonothermal GaN

The electrical properties at different temperatures of GaN grown by the basic ammonothermal method are studied. In the temperature range of 95–500 K, the scattering mechanism of GaN changes from ionized impurity scattering at low temperature to polar optical phonon scattering at high temperatures. It is found that the experimental measurement value at room temperature is lower than the calculated value, due to the multi‐ion scattering effect caused by high impurity concentrations, which are believed to result from the compensation of Mg, Mn, and V_Ga‐H_x.